High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Design tradeoffs for the optimization of inductor Q have been analyzed, and thick metallization has been identified as the most promising technology enhancement. Peak Qs approaching 19 have been demonstrated using thick metal.Keywords
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