Modelling the Raman spectrum of the amorphous-crystal Si system
- 20 March 1986
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 19 (8) , 1113-1122
- https://doi.org/10.1088/0022-3719/19/8/010
Abstract
A model to calculate the Raman response of small Si crystallites immersed in an amorphous Si matrix is developed. The structure of the system is modelled by an infinite crystalline slab of varying width, in which the atoms on the (111) surfaces on both sides of the slab are attached to Bethe lattices. The Raman response is obtained from a simple polarisability model using the Green function technique. The results are compared with recent experiments. The model can be used for Si crystallites with free and hydrogenated (111) surfaces.Keywords
This publication has 9 references indexed in Scilit:
- Long-range correlations in Bethe latticesPhysical Review B, 1983
- Inelastic neutron scattering from hydrogen in amorphous siliconJournal of Physics C: Solid State Physics, 1983
- Characterization of Si/SiO2 interface defects by electron spin resonanceProgress in Surface Science, 1983
- Vibrations of defects in amorphous SiJournal of Physics C: Solid State Physics, 1982
- Raman scattering from hydrogenated microcrystalline and amorphous siliconJournal of Physics C: Solid State Physics, 1982
- Effect of dimensions on the vibrational frequencies of thin slabs of siliconPhysical Review B, 1980
- Raman study of laser annealed siliconSolid State Communications, 1979
- Electronic surface structure of a tetrahedrally coordinated covalent solid with a simple four-state HamiltonianJournal of Physics C: Solid State Physics, 1975
- Vibrational properties of amorphous Si and GePhysical Review B, 1975