Observation of growth modes during metal-organic chemical vapor deposition of GaN
- 24 May 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (22) , 3326-3328
- https://doi.org/10.1063/1.123333
Abstract
We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature independent and Ga-transport limited. Transitions between step-flow, layer-by-layer, and three-dimensional growth modes were determined as a function of temperature and growth rate.Keywords
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