Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well
- 1 March 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (3) , 109-112
- https://doi.org/10.1109/55.748904
Abstract
We show that the channel thickness of modulation-doped field-effect transistors (MODFETs) based on an InAlAs/InGaAs heterojunction can be reduced from 15 to 8 nm without any degradation of the main DC and RF figures of merits. Furthermore, short-channel effects, which are pronounced in sub-0.1-μm devices, can be effectively suppressed by this thin-channel design. The retainment of high performance and alleviation of short-channel effects are attributed to the excellent two-dimensional electron gas (2-DEG) confinement by the inserted InAs layer. The successful channel thinning opens up the possibility of employing high-quality thin-channel structures for MODFETs with gate lengths below 0.05 μm.Keywords
This publication has 11 references indexed in Scilit:
- High output conductance of InAlAs/InGaAs/InP MODFET due to weak impact ionization in the InGaAs channelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFETs by electrochemical etchingIEEE Electron Device Letters, 1998
- The importance of electrochemistry-related etching in the gate-groove fabrication for InAlAs/InGaAs HFETsIEEE Electron Device Letters, 1998
- Dependence on channel potential structures of I–V characteristics in InAlAs/InGaAs pseudomorphic high electron mobility transistorsJournal of Applied Physics, 1997
- 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel EffectsJapanese Journal of Applied Physics, 1994
- Scaling properties and short-channel effects in submicrometer AlGaAs/GaAs MODFET's: A Monte Carlo studyIEEE Transactions on Electron Devices, 1993
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channelIEEE Electron Device Letters, 1992
- Optimization and Characterization of InAs/(AlGa)Sb Heterojunction Field-Effect TransistorsJapanese Journal of Applied Physics, 1990
- Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETsIEEE Transactions on Electron Devices, 1989