Scaling properties and short-channel effects in submicrometer AlGaAs/GaAs MODFET's: A Monte Carlo study

This publication has 43 references indexed in Scilit:

• Ultra-submicrometer-gate AlGaAs/GaAs HEMTs
  IEEE Electron Device Letters, 1990
• Overshoot saturation in ultra-submicron FETs due to minimum acceleration lengths
  Solid-State Electronics, 1989
• Theory and applications of near ballistic transport in semiconductors
  Proceedings of the IEEE, 1988
• Scaling properties of high electron mobility transistors
  IEEE Transactions on Electron Devices, 1986
• Performance of heterostructure FET's in LSI
  IEEE Transactions on Electron Devices, 1986
• A new model for modulation-doped FET's
  IEEE Electron Device Letters, 1985
• Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's
  IEEE Transactions on Electron Devices, 1982
• Current equations for velocity overshoot
  IEEE Electron Device Letters, 1982
• Ballistic transport in semiconductor at low temperatures for low-power high-speed logic
  IEEE Transactions on Electron Devices, 1979
• Electron dynamics in short channel field-effect transistors
  IEEE Transactions on Electron Devices, 1972