Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFETs by electrochemical etching
- 1 December 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (12) , 484-486
- https://doi.org/10.1109/55.735754
Abstract
We show that by making full use of the features of electrochemical etching in InAlAs/InGaAs heterostructures, deep gate grooves with small side etching can be fabricated. The most important advantage of this technology is that the vertical etching in the small gate openings will be remarkably enhanced by a self-organized process. Therefore the electrochemical etching provides a what we call "self-compensation" of the short channel effects. The effectiveness of this technology is evidenced by the excellent performance combined with the alleviation of the threshold-voltage shift and suppression of transconductance degradation in MODFET's with gate lengths below 0.1 /spl mu/m.Keywords
This publication has 9 references indexed in Scilit:
- Improving threshold-voltage uniformity of0.1 µm InP-based MODFETs with different gate layoutsElectronics Letters, 1998
- Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTsJapanese Journal of Applied Physics, 1998
- The importance of electrochemistry-related etching in the gate-groove fabrication for InAlAs/InGaAs HFETsIEEE Electron Device Letters, 1998
- 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel EffectsJapanese Journal of Applied Physics, 1994
- Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate lengthJournal of Applied Physics, 1993
- Scaling properties and short-channel effects in submicrometer AlGaAs/GaAs MODFET's: A Monte Carlo studyIEEE Transactions on Electron Devices, 1993
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channelIEEE Electron Device Letters, 1992
- Ultra-submicrometer-gate AlGaAs/GaAs HEMTsIEEE Electron Device Letters, 1990