Determination of the GaN/A1N band discontinuities via the (− 0 ) acceptor level of iron
- 31 January 1995
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 29 (1-3) , 61-64
- https://doi.org/10.1016/0921-5107(94)04004-n
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopyApplied Physics Letters, 1994
- Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layersApplied Physics Letters, 1994
- Iron Acceptors in Gallium Nitride (GaN)Materials Science Forum, 1993
- Optical study of spin-flip transitions atin InPPhysical Review B, 1993
- in GaP studied by Fourier-transform emission and absorption spectroscopyPhysical Review B, 1992
- Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the StrainJapanese Journal of Applied Physics, 1992
- FTIR High Resolution Optical Study of GaAs:FeMaterials Science Forum, 1992
- Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wellsApplied Physics Letters, 1990
- Deep-Level Impurities: A Possible Guide to Prediction of Band-Edge Discontinuities in Semiconductor HeterojunctionsPhysical Review Letters, 1985
- The photoionisation cross section of deep-level impurities in semiconductorsJournal of Physics C: Solid State Physics, 1980