Photo‐assisted chemical vapor deposition of gallium sulfide thin films

This publication has 10 references indexed in Scilit:

• Synthesis and Characterization of Some Mixed Alkyl Thiocarbamates of Gallium and Indium, Precursors for III/VI Materials: The X-ray Single-Crystal Structures of Dimethyl- and Diethylindium Diethyldithiocarbamate
  Chemistry of Materials, 1995
• Vapor Phase Laser Photochemistry and Determination by Electron Diffraction of the Molecular Structure of [(tBu)GaS]4: Evidence for the Retention of the Ga4S4 Cubane Core during the MOCVD Growth of Cubic GaS
  Organometallics, 1995
• Gallium Arsenide Transistors: Realization Through a Molecularly Designed Insulator
  Science, 1994
• Chemical vapor deposition of gallium sulfide: phase control by molecular design
  Chemistry of Materials, 1993
• Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS
  Applied Physics Letters, 1993
• Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor
  Applied Physics Letters, 1993
• Surface passivation of GaAs with P2S5-containing solutions
  Journal of Applied Physics, 1992
• The preparation of (Al₂O₃)_x(SiO₂)_y thin films using [al(OSiEt₃)₃]₂ as a single‐source precursor
  Advanced Materials for Optics and Electronics, 1992
• Chemical vapor deposition of cubic gallium sulfide thin films: a new metastable phase
  Chemistry of Materials, 1992
• New and unified model for Schottky barrier and III–V insulator interface states formation
  Journal of Vacuum Science and Technology, 1979