Defects in annealed Czochralski Silicon
- 16 October 1980
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 61 (2) , K133-K135
- https://doi.org/10.1002/pssa.2210610254
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Precipitation of oxygen in dislocation-free siliconPhysica Status Solidi (a), 1979
- {113} Loops in electron-irradiated siliconPhilosophical Magazine A, 1979
- Electron Beam Induced Changes of the Real Structure of SemiconductorsCrystal Research and Technology, 1979
- Defects in electron-irradiated germaniumPhilosophical Magazine, 1976
- EPR of aSi interstitial complex in irradiated siliconPhysical Review B, 1976
- The dynamic observation of the formation of defects in silicon under electron and proton irradiationPhilosophical Magazine, 1973
- The nature of rod-like defects observed in boron irradiated siliconRadiation Effects, 1972
- On the annealing of damage produced by boron ion implantation of silicon single crystalsRadiation Effects, 1971