Heteroepitaxial Growth and Superstructure of Ge on Si(111)–7×7 and (100)–2×1 Surfaces
- 1 October 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (10R)
- https://doi.org/10.1143/jjap.22.1482
Abstract
The initial stage of the heteroepitaxy, and the superstructure of Ge on Si surfaces, have been investigated by LEED and AES. Germanium was evaporated on to a clean Si(111–7×7 surface and also on to an Si(100)–2×1 surface. The layer-by-layer growth of Ge films on the Si surfaces was confirmed from the decrease in intensity of the Si(LVV)-AES signal with increase in Ge coverage. It was found that the (7×7) superstructure of the Si (111) surface is replaced by a (5×5) superstructure at about 2 monolayers coverage of Ge. The phase diagram of the superstructure of Ge on the Si(111) system was constructed for Ge coverage in monolayers evaporated at room temperature, versus annealing temperature. A similar study was also extended to Ge on an Si(100)–2×1 surface, where the original LEED pattern is not strongly distrubed at about 1–2 monolayers of Ge.Keywords
This publication has 19 references indexed in Scilit:
- LEED/AES Studies of the Ge on Si(111)7×7 SurfaceJapanese Journal of Applied Physics, 1983
- Structure and electronic properties of cleaved Si(111) upon Ge adsorptionSolid State Communications, 1982
- Initial stage of room-temperature metal-silicide formation studied by high-energy-ion scatteringPhysical Review B, 1981
- Low energy electron loss spectroscopy of Si–Ge interfacesJournal of Vacuum Science and Technology, 1981
- Microscopic investigation of the band discontinuities at the silicon-germanium heterojunction interfaceSolid State Communications, 1980
- Combined LEED, AES, and work function studies during the formation of Ge : GaAs(110) heterostructuresJournal of Vacuum Science and Technology, 1980
- Microscopic aspects of Si-Ge heterojunction formationSolid State Communications, 1980
- Electronic structure in GaAs/Ge through angle-resolved photoemissionJournal of Vacuum Science and Technology, 1979
- Ge(111) 7 × 7 surface structure induced by SnSolid State Communications, 1978
- Some New Techniques in Reflection High Energy Electron Diffraction (RHEED) Application to Surface Structure StudiesJapanese Journal of Applied Physics, 1977