New insight into proton-induced latchup: Experiment and modeling
- 22 November 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (21) , 2952-2954
- https://doi.org/10.1063/1.110283
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- An observation of proton-induced latchup (in CMOS microprocessor)IEEE Transactions on Nuclear Science, 1992
- A verified proton induced latch-up in space (CMOS SRAM)IEEE Transactions on Nuclear Science, 1992
- Nuclear and damage effects in Si produced by irradiations with medium energy protonsIEEE Transactions on Nuclear Science, 1991
- Latchup in CMOS from single particlesIEEE Transactions on Nuclear Science, 1990
- Investigation of single event upset subject to protons of intermediate energy range (RAM)IEEE Transactions on Nuclear Science, 1990
- Radial Energy Transfer Density Distribution around the Fast Ion Tracks in Silicon and GermaniumPhysica Status Solidi (b), 1990
- A model for proton-induced SEUIEEE Transactions on Nuclear Science, 1989
- Proton-Induced Nuclear Reactions in SiliconIEEE Transactions on Nuclear Science, 1981
- Statistical models of fragmentation processesPhysics Letters B, 1974
- Energy Deposition by Electron Beams andRaysPhysical Review B, 1968