InAs/(GaIn)Sb superlattices: a promising material system for infrared detection
- 1 January 2002
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Band parameters for III–V compound semiconductors and their alloysJournal of Applied Physics, 2001
- InAs/Ga1-xInxSb infrared superlattice diodes: correlation between surface morphology and electrical performancePublished by SPIE-Intl Soc Optical Eng ,1999
- High performance InAs/Ga1-xInxSb superlattice infrared photodiodesApplied Physics Letters, 1997
- Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSbJournal of Applied Physics, 1996
- Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlatticesApplied Physics Letters, 1995
- Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimesJournal of Applied Physics, 1995
- Optimization of absorption in InAs/InxGa1-xSb superlattices for long-wavelength infrared detectionSuperlattices and Microstructures, 1995
- Band lineups and deformation potentials in the model-solid theoryPhysical Review B, 1989
- Proposal for strained type II superlattice infrared detectorsJournal of Applied Physics, 1987
- Two-dimensional electronic structure in InAs-GaSb superlatticesSolid State Communications, 1978