Control in sub-100 nm lithography in SAL-601
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (6) , 2327-2331
- https://doi.org/10.1116/1.589639
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Relationship between resist performance and reaction order in a chemically amplified resist systemJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Acid-diffusion effect on nanofabrication in chemical amplification resistJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- High-resolution lithography with a vacuum STMUltramicroscopy, 1992
- Sub-30 nm lithography in a negative electron beam resist with a vacuum scanning tunneling microscopeApplied Physics Letters, 1991
- Proximity correction on the AEBLE-150Journal of Vacuum Science & Technology B, 1988
- 10-nm linewidth electron beam lithography on GaAsApplied Physics Letters, 1983
- Sub-20-nm-wide metal lines by electron-beam exposure of thin poly(methyl methacrylate) films and liftoffApplied Physics Letters, 1981
- Proximity effect in electron-beam lithographyJournal of Vacuum Science and Technology, 1975