High-current-density thin-film silicon diodes grown at low temperature
- 13 September 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (11) , 2122-2124
- https://doi.org/10.1063/1.1789580
Abstract
High-performance thin-filmsilicon n – i – p diodes are fabricated at temperatures below 160 ° C using hot-wire chemical vapor deposition. The 0.01 mm 2 diodes have a forward current-density of near 1000 A ∕ cm 2 and a rectification ratio over 10 7 at ± 2 V . Use of microcrystalline silicon i and n layers results in higher current-density diodes than with amorphous silicon, primarily by lowering a barrier to carrier injection. A 30 nm intrinsic Si buffer layer between the i and p layers is needed to reduce the reverse leakage current. Minimizing diode area increases forward current density by reducing the voltage drop across the external series resistances.Keywords
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