High current post-hydrogenated chemical vapor deposited amorphous silicon p-i-n diodes
- 1 June 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (11) , 988-990
- https://doi.org/10.1063/1.92978
Abstract
Amorphous silicon p‐i‐n diodes have been fabricated for the first time by chemical vapor deposition and post‐hydrogenation in a hydrogen plasma. By analyzing the current‐voltage characteristics we obtain current densities up to 50 A/cm2 and rectification ratios better than 107 for 3‐V applied bias. A characteristic reversible breakdown voltage is observed up to voltages of ∼20 V. These results are compared with those obtained on amorphous silicon p‐i‐n diodes prepared by glow discharge decomposition of SiH4.Keywords
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