Optical and electronic properties of microcrystalline silicon as a function of microcrystallinity
- 15 February 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (4) , 1882-1888
- https://doi.org/10.1063/1.372108
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Photoluminescence and Raman studies in thin-film materials: Transition from amorphous to microcrystalline siliconApplied Physics Letters, 1999
- Structure and hydrogen content of stable hot-wire-deposited amorphous siliconApplied Physics Letters, 1998
- Effect of hydrogen dilution on the structure of amorphous silicon alloysApplied Physics Letters, 1997
- Stable amorphous-silicon thin-film transistorsApplied Physics Letters, 1997
- Structure and growth of hydrogenated microcrystalline silicon: Investigation by transmission electron microscopy and Raman spectroscopy of films grown at different plasma excitation frequenciesPhilosophical Magazine A, 1997
- Recrystallization of Amorphous Silicon Deposited on Ultra Thin Microcrystalline Silicon LayersMRS Proceedings, 1997
- Electronic Properties of Microcrystalline SiliconMRS Proceedings, 1997
- On the Way Towards High Efficiency Thin Film Silicon Solar Cells by the “Micromorph” ConceptMRS Proceedings, 1996
- Microcrystalline Silicon in a-SI:H Based Multljunction Solar CellsMRS Proceedings, 1992
- Deposition of device quality, low H content amorphous siliconJournal of Applied Physics, 1991