Structure and hydrogen content of stable hot-wire-deposited amorphous silicon
- 30 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (22) , 3244-3246
- https://doi.org/10.1063/1.122732
Abstract
Thin-film transistors incorporating a hot-wire chemical-vapor-deposited silicon layer have been shown to exhibit superior electronic stability as compared to glow-discharge-deposited amorphous silicon devices. Hot-wire-deposited silicon films of various thicknesses (37–370 nm) on silicon dioxide were investigated. The films are structurally inhomogeneous. Raman measurements and transmission electron microscopy show that isolated cone-shaped crystals grow within a primarily amorphous layer. The amorphous interface region has a low hydrogen content of 2.0±0.2 at. %, while the films exhibit an enhanced hydrogen concentration in the surface region. The bond-angle distribution in the amorphous phase is comparable to that of device-quality glow-discharge-deposited amorphous silicon.Keywords
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