Raman study of damage processes in Si+-implanted GaAs
- 1 March 1995
- journal article
- Published by Elsevier in Journal of Molecular Structure
- Vol. 348, 33-36
- https://doi.org/10.1016/0022-2860(95)08582-g
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Phonon shifts in ion bombarded GaAs: Raman measurementsSolid State Communications, 1987
- Raman study of phosphorous-implanted and pulsed laser-annealed GaAsJournal of Applied Physics, 1986
- Study of ion-implantation damage in GaAs:Be and InP:Be using Raman scatteringJournal of Applied Physics, 1983