Lattice-Location Study of Hf Implanted in Ni
- 1 February 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 7 (3) , 951-955
- https://doi.org/10.1103/physrevb.7.951
Abstract
The channeling technique has been used to study the lattice location of Hf implanted in single-crystal Ni samples. Results indicate that about one-half the Hf atoms occupy regular Ni lattice sites, the remainder being in some form of precipitate. It was found that annealing the sample above 600 °C promotes further precipitation of the impurity. These results are compared with recent hyperfine-interaction experiments on the same system.Keywords
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