Deep-level analysis of n-type GaAs1−xPx alloys
- 15 July 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (2) , 1004-1007
- https://doi.org/10.1063/1.360401
Abstract
Deep‐level transient spectroscopy has been used to study the properties of electron and hole traps present in n‐type GaAs1−x P x alloys and their evolution versus the alloy composition. An electron trap labeled E 0 is observed for all values of the alloy composition x, while a second electron trap E 1 appears only for 1≳x≥0.81. As for hole traps one (H 2) appears for 1≳x≥0.75, while two others, H 0 and H 1, are detected for x≥0.81 and for 1≳x≥0.81, respectively. Their ionization energies have been determined and the barriers, associated with electron capture, have been measured in order to determine the energetic position of the two electron traps relative to the conduction band.This publication has 15 references indexed in Scilit:
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