Deep-level analysis in Te-doped GaAs0.62P0.38

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Abstract
Deep‐level transient spectroscopy and photocapacitance techniques have been used to study the features of the main electron trap, with thermal activation energy equal to ΔEB=0.39 eV, present in Te‐doped GaAs0.62P0.38, obtained by vapor‐phase epitaxy. Nonexponential behavior of this trap in thermal emission and capture has been interpreted using a model based on the alloy broadening effect. Good agreement of the deep‐level parameters determined from the emission and capture data has been obtained, and additionally confirmed by results of independent measurements of the transition region width. The influence of this level on the luminous intensity of light emitting diodes suggests that it can be an effective nonradiative recombination center.