Grown-in point defects in vapour phase epitaxial GaAs0.6P0.4:Te
- 1 April 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (4) , 538-543
- https://doi.org/10.1088/0268-1242/8/4/010
Abstract
Deep-level transient spectroscopy (DLTS) has been employed to study grown-in point defects in vapour phase epitaxial layers of GaAs0.6P0.4:Te. It was found that for the Ga-rich vapour phase three electron traps T1 (0.20 eV), T2 (0.18 eV) and T3 (0.38 eV) are formed. The traps T1 and T2 were found to be donor-related and are tentatively identified as TeAsGaAsTeAs and OiTeAs complexes, respectively. The trap T3 was found to be dependent on the dislocation density and it is possibly associated with either an As or P vacancy generated by the increase in misfit dislocations. A detrimental effect of these defects on the radiative recombination efficiency is shown. Under an excess of the group V elements in the vapour phase, only one electron trap T4 (0.18 eV) was observed.Keywords
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