Growth and characterization of strained layers of GaAsxP1−x
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 504-511
- https://doi.org/10.1016/0022-0248(88)90574-x
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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