Impact ionization coefficients in In0.2Ga0.8As/GaAs strained-layer superlattices
- 28 July 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (4) , 212-214
- https://doi.org/10.1063/1.97174
Abstract
The impact ionization coefficients for electrons and holes have been measured in In0.2Ga0.8As/GaAs strained‐layer superlattices (SLS’s) for transport perpendicular to the superlattice. The pure electron and hole initiated primary photocurrents were produced in p+n mesa photodiodes having In0.1Ga0.9As alloy photon absorption regions and an SLS active region carrier concentration of 7.4×1015 cm−3. The impact ionization coefficient for electrons is found to be larger than for holes with a ratio that varies from 1.8 at 2.7×105 V/cm to 1.4 at 3.8×105 V/cm.Keywords
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