Voltage-controlled Q switching of InGaAs/InP single quantum well lasers
- 6 November 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (19) , 1940-1942
- https://doi.org/10.1063/1.102171
Abstract
The light emission characteristics of high performance InGaAs/InP single quantum well laser diodes with a monolithically integrated intracavity loss modulator have been investigated. We demonstrate efficient voltage‐controlled tuning of the lasing threshold current over more than one order of magnitude. In addition, active Q switching of 7 mW lasing light power with a change in electrical power of <30 μW is achieved.Keywords
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