Abstract
The effect of static strain in strongly coupled orbital triplet Jahn-Teller (JT) systems is investigated analytically. Basic JT theory is used to show how tetragonal, trigonal and orthorhombic strains modify the structure of T(X)e, T(X)t and T(X)(e+t2)JT systems. These results are applied to the modelling of systems of deep level impurities in semiconductors. Explanations are given for why random strains can greatly influence the results of electron paramagnetic resonance (EPR) experiments and cause energy splittings in optical zero-phonon lines. The effects of applied uniaxial stresses are also described using the strain model.

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