Substrate orientation dependence of enhanced epitaxial regrowth of silicon
- 15 August 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (4) , 1207-1212
- https://doi.org/10.1063/1.334050
Abstract
This work extends the study of dopant-enhanced epitaxial regrowth rate of amorphized Si from the 〈100〉 to the 〈110〉 and 〈111〉 orientations of Si. Boron and phosphorus dopants are considered. The annealing temperatures are 500 and 550 °C. Phosphorus enhances the growth rates in all three orientations by a constant factor of 8.1±0.9. Boron produces a higher enhancement factor of 12.2±1.2, except in the case of 〈100〉. Implications of the results on various growth models are considered. The crystalline quality of regrown 〈111〉 layers is improved in the doped samples.This publication has 14 references indexed in Scilit:
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