Ambipolar Diffusion Coefficients in a-SiC:H Alloys in Steady- State and Transient Grating Measurements
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Asymmetric degradation of electron and hole μτ-products in a-Si:H/a-SiC:H multilayers under illuminationJournal of Non-Crystalline Solids, 1991
- The mechanism of subnanosecond carrier recombination in a-Si:HJournal of Non-Crystalline Solids, 1991
- Picosecond photoinduced index changes in a-Si:H and related alloys measured by transient grating experimentsJournal of Non-Crystalline Solids, 1987