Epitaxial growth of Y-stabilised zirconia films on (100)InP substrates by pulsed laser deposition
- 2 February 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 209 (4) , 883-889
- https://doi.org/10.1016/s0022-0248(99)00660-0
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Direct measurement of substrate refractive indices and determination of layer indices in slab-guiding structures.Applied Optics, 1997
- Memory applications based on ferroelectric and high-permittivity dielectric thin filmsMicroelectronic Engineering, 1995
- Current Status of Piezoelectric Substrate and Propagation Characteristics for SAW DevicesJapanese Journal of Applied Physics, 1993
- Epitaxial YBa2Cu3O7−δ on GaAs(001) using buffer layersApplied Physics Letters, 1992
- In situ deposition of epitaxial PbZrxTi(1−x)O3 thin films by pulsed laser depositionApplied Physics Letters, 1991
- In situ single-chamber laser processing of YBa2Cu3O7−δ superconducting thin films on yttria-stabilized zirconia buffered (100)GaAsApplied Physics Letters, 1991
- Room-temperature operation of an InGaAsP double-heterostructure laser emitting at 1.55 μm on a Si substrateApplied Physics Letters, 1990
- On the nature of oxides on InP surfacesJournal of Vacuum Science & Technology A, 1985
- Growth of indium phosphide films from In and P2 beams in ultra-high vacuumJournal of Physics D: Applied Physics, 1974
- The Zirconia-Yttria SystemJournal of the Electrochemical Society, 1951