Trapping and recombination dynamics of low-temperature-grown InGaAs/InAlAs multiple quantum wells
- 26 January 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (4) , 439-441
- https://doi.org/10.1063/1.120766
Abstract
We have observed a long-lived residual photoconductivity in low-temperature-grown (LT) InGaAs. These results have significant consequences for devices comprised of LT-InGaAs, other defect moderated materials, and standard-temperature-grown InGaAs. Our investigation utilizes time-resolved terahertz conductivity to quantify the trapping and recombination rates of LT Be-doped In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As multiple quantum wells and bulk InGaAs. It is found that Be doping reduces the residual photoconductivity and increases the initial electron trapping rate. These results are in contrast to those observed via transient absorption studies, which suggest that these systems have returned to equilibrium after the initial transient. Furthermore, a 600 °C anneal increases both the trapping and recombination rate in all Be-doped samples.Keywords
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