1.5-μm GaInAsP planar buried heterostructure lasers grown using chemical-beam-epitaxial base structures
- 15 February 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (4) , 1218-1220
- https://doi.org/10.1063/1.339984
Abstract
GaInAsP/InP double heterostructures grown by chemical-beam epitaxy have been used in conjunction with liquid-phase-epitaxial regrowth to fabricate high-performance buried heterostructure lasers operating at a wavelength of 1.5 μm. These lasers show room-temperature threshold currents as low as 12 mA, external quantum efficiencies as high as 0.2 mW/mA per facet, and, in general, linear output power up to ∼10 mW/facet. The 3-dB bandwidth at optimal biasing is about 8 GHz and is believed to be limited by the heatsink stud. The relative intensity noise is low, <−150 dB/Hz at 1 GHz for bias currents from 50 mA to above 150 mA.This publication has 7 references indexed in Scilit:
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