Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes
- 6 December 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 235 (1-4) , 177-182
- https://doi.org/10.1016/s0022-0248(01)01918-2
Abstract
No abstract availableKeywords
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- Room Temperature 339 nm Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire SubstrateJapanese Journal of Applied Physics, 2000
- AlGaN/GaN quantum well ultraviolet light emitting diodesApplied Physics Letters, 1998
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1997