AlGaN/GaN quantum well ultraviolet light emitting diodes
- 21 September 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (12) , 1688-1690
- https://doi.org/10.1063/1.122246
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrateApplied Physics Letters, 1998
- The effect of H2 on morphology evolution during GaN metalorganic chemical vapor depositionApplied Physics Letters, 1997
- Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1996
- Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1996
- Violet and Near-UV Light Emission from GaN/Al 0.08Ga 0.92N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1995
- Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layersApplied Physics Letters, 1995
- Growth of GaN and AlGaN for UV/blue p-n junction diodesJournal of Crystal Growth, 1993
- Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1991