Effect of Oxygen on the Electromigration Behavior of Al Thin Films
- 1 June 1972
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (11) , 434-436
- https://doi.org/10.1063/1.1654005
Abstract
Aluminum thin films were electrically stressed in a high‐vacuum furnace and the damage resulting from the electromigration of aluminum ions was monitored by the change in stripe resistance. When high‐purity oxygen was periodically bled into the furnace, Ṙ ranged between a constant value and zero, depending on the magnitude of ΔR. The proposed model suggests the stabilization of microscopic voids by the formation of a thin oxide film on the void surface.Keywords
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