Electronic structure and properties of AlN
Open Access
- 15 March 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (11) , 7115-7123
- https://doi.org/10.1103/physrevb.49.7115
Abstract
The electronic structure of the wurtzite-type phase of aluminum nitride has been investigated by means of periodic ab initio Hartree-Fock calculations. The binding energy, lattice parameters (a,c), and the internal coordinate (u) have been calculated. All structural parameters are in excellent agreement with the experimental data. The electronic structure and bonding in AlN are analyzed by means of density-of-states projections and electron-density maps. The calculated values of the bulk modulus, its pressure derivative, the optical-phonon frequencies at the center of the Brillouin zone, and the full set of elastic constants are in good agreement with the experimental data.Keywords
This publication has 43 references indexed in Scilit:
- Nonmetallic crystals with high thermal conductivityPublished by Elsevier ,2004
- Vibrational Spectroscopy of Aluminum NitrideJournal of the American Ceramic Society, 1993
- Raman scattering in AlxGa1−xN alloysSolid State Communications, 1991
- The intrinsic thermal conductivity of AINJournal of Physics and Chemistry of Solids, 1987
- Optical phonons of aluminum nitrideJournal of Applied Physics, 1984
- 1.0-GHz thin-film bulk acoustic wave resonators on GaAsApplied Physics Letters, 1983
- Dependence on volume of the phonon frequencies and the ir effective charges of several III-V semiconductorsPhysical Review B, 1983
- X-ray-diffraction determination of valence-electron density in aluminum nitridePhysical Review B, 1981
- Crystal structure refinement of AlN and GaNSolid State Communications, 1977
- Raman spectra of AℓN, cubic BN and BPSolid State Communications, 1968