1.0-GHz thin-film bulk acoustic wave resonators on GaAs
- 15 October 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (8) , 750-751
- https://doi.org/10.1063/1.94484
Abstract
This letter reports on a new fabrication technique and experimental results obtained on bulk acoustic wave resonators using thin piezoelectric composite films of A1N on GaAs insulating substrates. The fabrication involves only a wafer top side planar processing compatible with integrated circuit technology. Resonators have been made in the frequency range UHF to 1 GHz in order to demonstrate the fabrication technique and evaluate material performance in resonator devices. Both longitudinal and shear wave resonators have been measured with temperature coefficients of −24 and −26.5 ppm/°C, respectively. Shear wave results were obtained from tilted c‐axis films grown in a dc planar magnetron sputtering system.Keywords
This publication has 5 references indexed in Scilit:
- c-axis inclined ZnO piezoelectric shear wave filmsApplied Physics Letters, 1983
- Low-temperature coefficient bulk acoustic wave composite resonatorsApplied Physics Letters, 1982
- ZnO/SiO 2 -diaphragm composite resonator on a silicon waferElectronics Letters, 1981
- Localized GaAs Etching with Acidic Hydrogen Peroxide SolutionsJournal of the Electrochemical Society, 1981
- Selective Etching of Gallium Arsenide Crystals in H[sub 2]SO[sub 4]-H[sub 2]O[sub 2]-H[sub 2]O SystemJournal of the Electrochemical Society, 1971