High rate epitaxial lift-off of InGaP films from GaAs substrates
- 10 April 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (15) , 2131-2133
- https://doi.org/10.1063/1.126276
Abstract
Centimeter sized, crack-free single crystal InGaP films of 1 μm thickness were released from GaAs substrates by a weight-induced epitaxial lift-off process. At room temperature, the lateral etch rate of the process as a function of the applied Al0.85Ga0.15As release layer thickness was found to have a maximum of 3 mm/h at 3 nm. Using 5-nm-thick AlAs release layers, the etch rate increased exponentially with temperature up to 11.2 mm/h at 80 °C. Correlation of the experimental data with the established theoretical description of the process indicate that the model is qualitatively correct but fails to predict the etch rates quantitatively by orders of magnitude.Keywords
This publication has 8 references indexed in Scilit:
- Vapor phase epitaxial liftoff of GaAs and silicon single crystal filmsSolar Energy Materials and Solar Cells, 1999
- High‐Speed GaAs Epitaxial Lift‐Off and Bonding with High Alignment Accuracy Using a Sapphire PlateJournal of the Electrochemical Society, 1999
- Process damage free thin-film GaAs solar cells by epitaxial liftoff with GaInP window layerSolar Energy Materials and Solar Cells, 1998
- Epitaxial lift-off GaAs solar cell from a reusable GaAs substrateMaterials Science and Engineering: B, 1997
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated CircuitsJapanese Journal of Applied Physics, 1997
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- Selective etching characteristics of HF for Al x Ga 1-x As/GaAsElectronics Letters, 1985
- High efficiency GaAs thin film solar cells by peeled film technologyJournal of Crystal Growth, 1978