noise in MOSFET as a diagnostic tool
- 31 October 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (10) , 1477-1481
- https://doi.org/10.1016/0038-1101(92)90086-r
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Excess noise as an indicator of digital integrated circuit reliabilityMicroelectronics Reliability, 1991
- Effect of radiation-induced charge on 1/f noise in MOS devicesIEEE Transactions on Nuclear Science, 1990
- 1/f/sup alpha / noise and fabrication variations of TiW/Al VLSI interconnectionsIEEE Electron Device Letters, 1990
- Study of the electronic trap distribution at the SiO/sub 2/-Si interface utilizing the low-frequency noise measurementIEEE Transactions on Electron Devices, 1990
- A 1/f noise technique to extract the oxide trap density near the conduction band edge of siliconIEEE Transactions on Electron Devices, 1989
- A thermal activation model for 1/ƒy noise in Si-MOSFETsSolid-State Electronics, 1988
- Spectral dependence of noise on gate bias in n-MOSFETSSolid-State Electronics, 1987
- Analysis of hot-carrier-induced aging from 1/f noise in short-channel MOSFET'sIEEE Electron Device Letters, 1986
- Flicker noise in hot electron degraded short channel MOSFETsSolid-State Electronics, 1984
- Screening of metal film defects by current noise measurementsApplied Physics Letters, 1973