Measurements of SiH3 and SiH2 Radical Densities in RF Silane Plasmas Using Laser Spectroscopic Techniques
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
In the RF (13.56 MHz) silane plasma, recently the SiH3 radical density was measured using infrared diode laser absorption spectroscopy, and the correlation between the SiH3 radical density and the growth rate of hydrogenated amorphous silicon thin film was investigated. The SiH2 radical density was also measured using modified laser induced fluorescence spectroscopy and intracavity laser absorption spectroscopy. Those measurement methods and main results are reviewed here.Keywords
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