Changes in carrier profiles of bonded SOI wafers with thermal annealing measured by the spreading resistance method
- 30 April 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 46 (4) , 545-553
- https://doi.org/10.1016/s0038-1101(01)00263-5
Abstract
No abstract availableKeywords
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