A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET
- 1 August 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (8) , 411-413
- https://doi.org/10.1109/55.852967
Abstract
A novel experimental technique, based on the double-gate operation, is proposed for extracting the back interface trap density of the fully depleted SOI MOSFET. The method relies on simple current-voltage measurements, requires no prior knowledge of the silicon film thickness, and successfully eliminates inaccuracies arising from thickness variations of the accumulation layer, by maintaining both interfaces in depletion. The sensitivity of the technique is shown to depend on the ratio of the interface trap and oxide capacitances of the buried oxide, and is thus limited only by the buried oxide thickness. The technique has been successfully used to monitor the increase in back interface trap density following Fowler-Nordheim stress.Keywords
This publication has 12 references indexed in Scilit:
- Determination of back interface state distribution in fully depleted SOI MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Suppression of geometric component of charge-pumping current in SOI/MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Influence of accumulation layer on interface trapdensity extractionElectronics Letters, 1998
- Examination of the time power law dependencies in hot carrier stressing of n-MOS transistorsIEEE Electron Device Letters, 1997
- Interface characterization of fully depleted SOI MOSFETs by a threshold-voltage methodSolid-State Electronics, 1993
- A CV technique for measuring thin SOI film thicknessIEEE Electron Device Letters, 1991
- Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulatorIEEE Transactions on Electron Devices, 1991
- Rapid electrical measurements of back oxide and silicon film thickness in an SOI CMOS processIEEE Transactions on Electron Devices, 1991
- Subthreshold slope in thin-film SOI MOSFETsIEEE Transactions on Electron Devices, 1990
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983