Examination of the time power law dependencies in hot carrier stressing of n-MOS transistors
- 1 February 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (2) , 51-53
- https://doi.org/10.1109/55.553041
Abstract
The origins of the different power laws arising from hot carrier stressing at low and high gate voltages are examined. It is found that damage at V/sub g/=V/sub d/ (predominantly electron trapping in the oxide) has the same underlying 0.5 power law exponent dependence as stress under I/sub b(max)/ (interface state creation) conditions, if degradation is measured as a function of injected electronic charge instead of time. It is proposed that the reduced gradient normally seen under V/sub g/=V/sub d/ stresses arises due to the repulsive electrostatic oxide fields created by the trapped oxide charge and does not reflect the fundamental rate of trap creation. Stressing at low gate voltages (V/sub g/=V/sub d//5) also reveals the presence of a similar time power law of exponent 0.5 when the oxide trap contribution alone is separated out from the rest of the damage. It is concluded that the 0.5 power law appears to be the fundamental underlying kinetic equation that is seen throughout the gate voltage stress range, despite the different types of damage and the very different trap creation mechanisms.Keywords
This publication has 12 references indexed in Scilit:
- Oxide-field dependence of the NMOS hot-carrier degradation rate and its impact on AC-lifetime predictionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Characterization of oxide trap and interface trap creation during hot-carrier stressing of n-MOS transistors using the floating-gate techniqueIEEE Electron Device Letters, 1993
- Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2or=V/sub d/) during hot-carrier stressing of n-MOS transistorsIEEE Transactions on Electron Devices, 1990
- The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistorsIEEE Transactions on Electron Devices, 1990
- Hot-carrier effects in n-channel MOS transistors under alternating stress conditionsIEEE Electron Device Letters, 1988
- Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETsIEEE Transactions on Electron Devices, 1988
- Observation of hot-hole injection in NMOS transistors using a modified floating-gate techniqueIEEE Transactions on Electron Devices, 1986
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985
- Characterization of thin-oxide MNOS memory transistorsIEEE Transactions on Electron Devices, 1972
- ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN Si–SiO2 INTERFACESApplied Physics Letters, 1970