Surface roughness during chemical beam etching and its remedy by enhanced cation diffusion
- 25 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (4) , 448-450
- https://doi.org/10.1063/1.112329
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Monolayer chemical beam etching: Reverse molecular beam epitaxyApplied Physics Letters, 1993
- Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorus trichlorideApplied Physics Letters, 1993
- Etching of InP by HCl in an OMVPE reactorJournal of Crystal Growth, 1991
- Observations on intensity oscillations in reflection high-energy electron diffraction during chemical beam epitaxyApplied Physics Letters, 1987
- Vapor‐Phase Etching of InP Using Anhydrous HCl and PH 3 GasJournal of the Electrochemical Society, 1986
- In-situ etching of InP by a low pressure transient HCI processJournal of Crystal Growth, 1985