Plasma etch-induced conduction changes in gallium nitride
- 1 March 1999
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (3) , 314-318
- https://doi.org/10.1007/s11664-999-0033-y
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Improved sidewall morphology on dry-etched SiO2 masked GaN featuresJournal of Electronic Materials, 1998
- Effect of dry etching on surface properties of III-nitridesJournal of Electronic Materials, 1997
- Cl2/Ar and CH4/H2/Ar dry etching of III–V nitridesJournal of Applied Physics, 1996
- Electron cyclotron resonance etching characteristics of GaN in SiCl4/ArApplied Physics Letters, 1996
- The influence of CH4/H2/Ar plasma etching on the conductivity of n-type gallium nitrideJournal of Applied Physics, 1995
- Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmasApplied Physics Letters, 1995
- High temperature electron cyclotron resonance etching of GaN, InN, and AlNApplied Physics Letters, 1995
- Ar+-ion milling characteristics of III-V nitridesJournal of Applied Physics, 1994
- Dry patterning of InGaN and InAlNApplied Physics Letters, 1994
- Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxyJournal of Vacuum Science & Technology A, 1993