Finding the asymmetric parasitic source and drain resistances from the a.c. conductances of a single MOS transistor
- 30 June 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (6) , 909-913
- https://doi.org/10.1016/0038-1101(95)00269-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Experimental derivation of the source and drain resistance of MOS transistorsIEEE Transactions on Electron Devices, 1980