Analysis of recombination activity of NiSi2 platelets in Si
- 16 July 1995
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 150 (1) , 463-470
- https://doi.org/10.1002/pssa.2211500140
Abstract
No abstract availableKeywords
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- A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activitySemiconductor Science and Technology, 1992
- Recombination properties of structurally well defined NiSi2 precipitates in siliconApplied Physics Letters, 1991
- Barrier inhomogeneities at Schottky contactsJournal of Applied Physics, 1991
- Precipitation behaviour of nickel in siliconPhilosophical Magazine A, 1989
- Recombination at Dislocations in Silicon and Gallium ArsenidePublished by Springer Nature ,1989