A comparative study of thin film transistors using rare earth oxides as gates
- 1 February 1987
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 147 (1) , 25-32
- https://doi.org/10.1016/0040-6090(87)90036-8
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- A CdS-Pr 6 O 11 thin film transistorInternational Journal of Electronics, 1984
- Some electrical properties of thin Yb2O3 films produced by different technological methodsThin Solid Films, 1982
- Dielectric properties of electron-beam-evaporated Nd2O3 thin filmsThin Solid Films, 1982
- Field effect spectroscopy of CdSe-insulator interface statesJournal of Applied Physics, 1981
- High voltage thin film transistors manufactured with photolithography and with Ta2O5 as the gate oxideThin Solid Films, 1979
- Barrier-Limited Conductivity in Thin Semiconducting FilmsPhysica Status Solidi (a), 1979
- A CdSe thin-film field effect transistorInternational Journal of Electronics, 1979
- Cadmium selenide thin-film transistorsJournal of Vacuum Science and Technology, 1978
- Polarizability of a Bias–Temperature Drifted Species in Thin Film Transistor StructuresCanadian Journal of Physics, 1972
- Cadmium Selenide Thin Film Field Effect TransistorsJournal of the Electrochemical Society, 1965