Silicon on thin insulator: prediction of the oxygen fluence required for the formation of a continuous buried oxide
- 31 January 1994
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 22 (2-3) , 172-180
- https://doi.org/10.1016/0921-5107(94)90241-0
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- precipitation in highly supersaturated oxygen-implanted single-crystal siliconPhysical Review B, 1993
- Analysis of buried oxide layer formation and mechanism of threading dislocation generation in the substoichiometric oxygen dose regionJournal of Materials Research, 1993
- Buried oxide layers formed by low-dose oxygen implantationJournal of Materials Research, 1992
- Low energy, oxygen dose optimization for thin film separation by implanted oxygenMaterials Science and Engineering: B, 1992
- Strained‐Ring and Double‐Bond Systems Consisting of the Group 14 Elements Si, Ge, and SnAngewandte Chemie International Edition in English, 1991
- Practical reduction of dislocation density in SIMOX wafersElectronics Letters, 1990
- Calorimetric evidence for structural relaxation in amorphous siliconPhysical Review Letters, 1989
- PridolianPublished by Springer Nature ,1989
- Silicon amorphization during ion implantation as a thermal phenomenonPhysical Review B, 1987
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978