Electrical properties of Na-incorporated Cu(In1−xGax)3Se5 thin films

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Abstract
Na-incorporated Cu ( In 1−x Ga x ) 3 Se 5 ( Cu ( In 1−x Ga x ) 3 Se 5 :Na ) films were prepared by the deposition of Cu ( In 1−x Ga x ) 3 Se 5 layers on Na 2 S -coated substrates. Electrical properties of the Cu ( In 1−x Ga x ) 3 Se 5 :Na films were evaluated by I–V and spectral response measurements of devices with an ITO/ZnO/CdS/Cu ( In 1−x Ga x ) 3 Se 5 :Na/Mo/glass structure. The Cu ( In 1−x Ga x ) 3 Se 5 :Na films with x>0 showed p -type conduction, whereas for Cu ( In 1−x Ga x ) 3 Se 5 without the addition of Na 2 S , films with x<0.3 showed n -type conduction. The addition of Na was found to have a strong influence on the electrical properties of Cu ( In 1−x Ga x ) 3 Se 5 films as well as Cu ( In 1−x Ga x ) Se 2 films.