Preparation of Ordered Vacancy Chalcopyrite-Type CuIn3Se5 Thin Films
- 1 September 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (9A) , L1251-1253
- https://doi.org/10.1143/jjap.33.l1251
Abstract
Polycrystalline CuIn3Se5 films were successfully prepared by three-source coevaporation with controlling and shielding of the molecular beams from elemental sources. The CuIn3Se5 film exhibited good chemical homogeneity and an ordered vacancy chalcopyrite-type structure with lattice constants of a=5.742 Å and c=11.486 Å. High-resolution transmission electron microscopy showed that the CuIn3Se5 film had a columnar microstructure and each grain contained a high density of twins in {112} planes. The band-gap energy of the film was determined to be 1.23 eV from optical transmission measurements. The film showed n-type conduction and low conductivity of 3.7×10-7/ Ω·cm. These characteristics of the CuIn3Se5 film are compared with those of the chalcopyrite-type CuInSe2 film.Keywords
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